ION-BEAM TECHNIQUES IN THIN-FILM DEPOSITION

被引:0
|
作者
HARPER, JME
机构
关键词
ION BEAMS - PLASMAS - SPUTTERING;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The importance of ion bombardment in thin film deposition has long been recognized. Plasma-based processes such as rf bias sputtering, magnetron sputtering, and plasma enhanced CVD show pronounced changes in film properties as the degree of ion bombardment of the growing film is varied. Recently, ion beam techniques have been developed which provide quantitative information on the importance of ion energy, ion flux, and the ratio of arrival rates of ions to film atoms. Several ion beam techniques are reviewed and examples are given of property modification which can be achieved by controlled ion bombardment.
引用
收藏
页码:129 / 134
页数:6
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