INFLUENCE OF PHONONS ON IMPURITY PHOTOCONDUCTIVITY SPECTRUM OF PHOSPHORUS-DOPED SILICON

被引：4

作者：

GUICHAR, GM

PROIX, F

BALKANSK.M

SEBENNE, C

机构：

来源：

PHYSICAL REVIEW B | 1972年 / 5卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.5.3013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3013 / &

共 50 条

[1] FIRST-ORDER STARK EFFECT IN PHOSPHORUS-DOPED SILICON FROM PHOTOCONDUCTIVITY ON IMPURITY LEVELS
GUICHAR, GM
SEBENNE, C
BALKANSKI, M
PROIX, F
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 422 - +
[2] HALL EFFECT AND IMPURITY LEVELS IN PHOSPHORUS-DOPED SILICON
LONG, D
MYERS, J
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[3] WIDTHS OF EXCITED IMPURITY LEVELS IN PHOSPHORUS-DOPED SILICON
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PARENT, LG
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[4] IMPURITY PHOTOCONDUCTIVITY OF PHOSPHORUS-DOPED EPITAXIAL GEXSI1-X FILMS
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DYSHLOVENKO, PE
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[5] WIDTHS OF EXCITED IMPURITY LEVELS IN PHOSPHORUS-DOPED SILICON.
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1600, (61):
[6] THICKNESS DEPENDENCE OF THE PHOTOCONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
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[7] INFRARED-ABSORPTION SPECTRUM OF PHOSPHORUS-DOPED SILICON
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SANGSTER, MJL
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (11): : L305 - L310
[8] HOPPING CONDUCTION IN PHOSPHORUS-DOPED SILICON
SASAKI, W
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (03): : 427 - 435
[9] PLANARIZATION OF PHOSPHORUS-DOPED SILICON DIOXIDE
ADAMS, AC
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C372 - C372
[10] STUDY ON CONDUCTIBILITY OF PHOSPHORUS-DOPED SILICON
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OSTOJA, P
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SUSI, E
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