INFLUENCE OF PHONONS ON IMPURITY PHOTOCONDUCTIVITY SPECTRUM OF PHOSPHORUS-DOPED SILICON

被引：4
|
作者：
GUICHAR, GM
PROIX, F
BALKANSK.M
SEBENNE, C
机构：
来源：
PHYSICAL REVIEW B | 1972年 / 5卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.5.3013
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：3013 / &
相关论文
共 50 条
  • [41] Trench filling with phosphorus-doped monocrystalline and polycrystalline silicon
    Lespiaux, J.
    Deprat, F.
    Goncalves, B. Rodrigues
    Souc, J.
    Leverd, F.
    Juhel, M.
    Mattei, J-G
    Giroud-Garampon, C.
    Roman, A.
    Magis, T.
    Hartmann, J. M.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 144
  • [42] DIFFUSION OF TIN IN PHOSPHORUS-DOPED AMORPHOUS HYDROGENATED SILICON
    KHODZHAEV, KK
    ABDURAKHMANOV, KP
    AMIROV, YY
    DIDIK, VA
    KULIKOV, GS
    TERUKOV, EI
    UTKINEDIN, DP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (07): : 725 - 727
  • [43] INFLUENCE OF VACANCY GENERATION CONDITIONS ON MEAN SQUARE DISPLACEMENTS OF PHOSPHORUS-DOPED SILICON LATTICE
    Purlys, R.
    Valiukevicius, T.
    Balakauskas, S.
    Janavicius, A. J.
    3RD INTERNATIONAL CONFERENCE RADIATION INTERACTION WITH MATERIAL AND ITS USE IN TECHNOLOGIES 2010, 2010, : 102 - 105
  • [44] SOLUBILITY OF TIN IN AMORPHOUS HYDROGENATED PHOSPHORUS-DOPED SILICON
    KHODZHAEV, KK
    ABDURAKHMANOV, KP
    AMIROV, YY
    KULIKOV, GS
    TERUKOV, EI
    UTKINEDIN, DP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (12): : 1369 - 1370
  • [45] FABRICATION AND CHARACTERIZATION OF EPITAXIAL HEAVILY PHOSPHORUS-DOPED SILICON
    DELALAMO, JA
    SWANSON, RM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (12) : 3011 - 3016
  • [46] COMMENT ON HALL-EFFECT IN PHOSPHORUS-DOPED SILICON
    DESHMUKH, VGI
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (05): : 649 - 651
  • [47] IMPURITY BAND CONDUCTION IN PHOSPHORUS DOPED SILICON
    ROUX, JF
    SCHUTTLER, R
    JOURNAL DE PHYSIQUE, 1971, 32 (2-3): : 177 - +
  • [48] Negative photoconductivity in polycrystalline silicon films doped with phosphorus
    Nakabayashi, M
    Ohyama, H
    Simoen, E
    Ikegami, M
    Claeys, C
    Kobayashi, K
    Yoneoka, M
    Takami, Y
    Sunaga, H
    Takizawa, H
    Miyahara, K
    BEAM INJECTION ASSESSMENT OF MICROSTRUCTURES IN SEMICONDUCTORS, 2000, 2000, 78-79 : 225 - 230
  • [49] EXCITED IMPURITY STATES AND TRANSIENT PHOTOCONDUCTIVITY IN COBALT DOPED SILICON
    CHANG, MCP
    PENCHINA, CM
    MOORE, JS
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (01): : 47 - &
  • [50] SHIFT OF IMPURITY PHOTOCONDUCTIVITY EDGE OF SILVER-DOPED SILICON UNDER INFLUENCE OF COMBINED ILLUMINATION
    LEBEDEV, AA
    MAMADALIMOV, AT
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (12): : 2019 - 2020
12345