STUDY ON CONDUCTIBILITY OF PHOSPHORUS-DOPED SILICON

被引：0

作者：

FINETTI, M

MAZZONE, AM

OSTOJA, P

PASSARI, L

RICCO, B

SUSI, E

机构：

来源：

ELETTROTECNICA | 1977年 / 64卷 / 08期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：662 / 662

页数：1

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[1] HOPPING CONDUCTION IN PHOSPHORUS-DOPED SILICON
SASAKI, W
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (03): : 427 - 435
[2] HOLE BURNING IN PHOSPHORUS-DOPED SILICON
MARKO, JR
HONIG, A
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 718 - &
[3] PLANARIZATION OF PHOSPHORUS-DOPED SILICON DIOXIDE
ADAMS, AC
CAPIO, CD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C372 - C372
[4] PLANARIZATION OF PHOSPHORUS-DOPED SILICON DIOXIDE
ADAMS, AC
CAPIO, CD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) : 423 - 429
[5] ON THE DETERMINATION OF PHOSPHORUS DEPTH PROFILE IN PHOSPHORUS-DOPED SILICON
ALFASSI, ZB
YANG, MH
[J]. JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-ARTICLES, 1989, 132 (01): : 99 - 104
[6] ENHANCED SPIN SUSCEPTIBILITY IN PHOSPHORUS-DOPED SILICON
BERGGREN, KF
[J]. PHILOSOPHICAL MAGAZINE, 1974, 30 (01): : 1 - 11
[7] ESR LINEWIDTH IN HEAVILY PHOSPHORUS-DOPED SILICON
NAGASHIMA, H
MATSUURA, E
OCHIAI, Y
[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (05) : 733 - +
[8] Synthesis and characterization of phosphorus-doped silicon nanoparticles
Baldwin, R
Kauzlarich, SM
[J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2003, 225 : U46 - U46
[9] Quantum confinement in phosphorus-doped silicon nanocrystals
Melnikov, DV
Chelikowsky, JR
[J]. PHYSICAL REVIEW LETTERS, 2004, 92 (04) : 4
[10] PULSED ENDOR EFFECTS IN PHOSPHORUS-DOPED SILICON
BROWN, IM
SLOOP, DJ
AMES, DP
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (03): : 355 - &

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