PLANARIZATION OF PHOSPHORUS-DOPED SILICON DIOXIDE

被引：86

作者：

ADAMS, AC

CAPIO, CD

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 02期

关键词：

D O I：

10.1149/1.2127434

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：423 / 429

页数：7

共 50 条

[1] PLANARIZATION OF PHOSPHORUS-DOPED SILICON DIOXIDE
ADAMS, AC
CAPIO, CD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C372 - C372
[2] LOW-PRESSURE CVD OF PHOSPHORUS-DOPED SILICON DIOXIDE
TOBIN, PJ
PRICE, JB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C124 - C124
[3] HOPPING CONDUCTION IN PHOSPHORUS-DOPED SILICON
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (03): : 427 - 435
[4] HOLE BURNING IN PHOSPHORUS-DOPED SILICON
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HONIG, A
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 718 - &
[5] STUDY ON CONDUCTIBILITY OF PHOSPHORUS-DOPED SILICON
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PASSARI, L
RICCO, B
SUSI, E
[J]. ELETTROTECNICA, 1977, 64 (08): : 662 - 662
[6] ON THE DETERMINATION OF PHOSPHORUS DEPTH PROFILE IN PHOSPHORUS-DOPED SILICON
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[J]. JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-ARTICLES, 1989, 132 (01): : 99 - 104
[7] HYDROGEN CONCENTRATION PROFILES IN AS-DEPOSITED AND ANNEALED PHOSPHORUS-DOPED SILICON DIOXIDE FILMS
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[J]. APPLIED PHYSICS LETTERS, 1988, 53 (21) : 2036 - 2038
[8] ENHANCED SPIN SUSCEPTIBILITY IN PHOSPHORUS-DOPED SILICON
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[J]. PHILOSOPHICAL MAGAZINE, 1974, 30 (01): : 1 - 11
[9] ESR LINEWIDTH IN HEAVILY PHOSPHORUS-DOPED SILICON
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MATSUURA, E
OCHIAI, Y
[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (05) : 733 - +
[10] Synthesis and characterization of phosphorus-doped silicon nanoparticles
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[J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2003, 225 : U46 - U46

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