OPTICAL TRANSPORT EVALUATION IN LAYERED IN2SE3 SEMICONDUCTOR

This paper presents a method of rapid evaluation of the transport parameters from the fit of the infrared reflectivity parameters of doped layered semiconductors. The plasma frequency omega-p and the related damping factor gamma-p have been calculated for the case of In2Se3 using a method which gives the minimum reflectivity R(min) as a function of the frequency of this minimum omega-min for different values of the plasmon parameters. The results are compared with the corresponding fits deduced from the measurements in far-infrared in the region between 8 and 700 cm-1 at room temperature. Calculated values are compared with experimental data.