OPTICAL TRANSPORT EVALUATION IN LAYERED IN2SE3 SEMICONDUCTOR

被引：0
|
作者：
LELIDIS, I
JULIEN, C
SIAPKAS, D
BALKANSKI, M
机构：
[1] UNIV PARIS 06,CNRS,PHYS SOLIDES LAB,4 PL JUSSIEU,F-75252 PARIS 05,FRANCE
[2] ARISTOTELIAN UNIV SALONIKA,SOLID STATE SECT,GR-54006 SALONIKA,GREECE
来源：
PHYSICA SCRIPTA | 1991年 / 44卷 / 06期
关键词：
D O I：
10.1088/0031-8949/44/6/019
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
This paper presents a method of rapid evaluation of the transport parameters from the fit of the infrared reflectivity parameters of doped layered semiconductors. The plasma frequency omega-p and the related damping factor gamma-p have been calculated for the case of In2Se3 using a method which gives the minimum reflectivity R(min) as a function of the frequency of this minimum omega-min for different values of the plasmon parameters. The results are compared with the corresponding fits deduced from the measurements in far-infrared in the region between 8 and 700 cm-1 at room temperature. Calculated values are compared with experimental data.
引用
收藏
页码：617 / 619
页数：3
相关论文
共 50 条
  • [21] Growth mechanism for vertically oriented layered In2Se3 nanoplates
    Gao, Yuan-Fei
    Pang, Si-Ming
    Bao, Hai-Hong
    Peng, Xian-Yun
    Sun, Yu-Jia
    Ren, Shu-Liang
    Meng, Da
    Zhang, Jun
    PHYSICAL REVIEW MATERIALS, 2020, 4 (03)
  • [22] Structure and electrical properties of In2Se3 < Mn > layered crystals
    Kaminskii, V. M.
    Kovalyuk, Z. D.
    Zaslonkin, A. V.
    Ivanov, V. I.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2009, 12 (03)
  • [23] Influence of Intercalation Cobalt on Properties of Layered Crystals In2Se3
    Boledzyuk, V. B.
    Shevchenko, A. D.
    Kudrynskyi, Z. R.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2012, 4 (03)
  • [24] In-plane anisotropic electronic properties in layered α′-In2Se3
    Liu, Zhun
    Wu, Jing
    Li, Jingbo
    JOURNAL OF APPLIED PHYSICS, 2021, 130 (01)
  • [25] FAR-INFRARED STUDIES ON IN2SE3 LAYERED MATERIALS
    LELIDIS, I
    SIAPKAS, D
    JULIEN, C
    BALKANSKI, M
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 3 (1-2): : 133 - 137
  • [26] Far-IR studies on In2Se3 layered materials
    Lelidis, I., 1600, (B3): : 1 - 2
  • [27] TRANSPORT MEASUREMENTS IN LITHIUM-INTERCALATED IN2SE3
    JULIEN, C
    ELFARH, L
    BALKANSKI, M
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 7 (03): : 221 - 226
  • [28] Theoretical investigation of geometry and electronic structure of layered In2Se3
    Ishikawa, M
    Nakayama, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (12A): : L1576 - L1579
  • [29] Crystal structures and phase transformation in In2Se3 compound semiconductor
    Ye, J.
    Soeda, S.
    Nakamura, Y.
    Nittono, O.
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (08): : 4264 - 4271
  • [30] Crystal structures and phase transformation in In2Se3 compound semiconductor
    Ye, JP
    Soeda, S
    Nakamura, Y
    Nittono, O
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (08): : 4264 - 4271
12345