OPTICAL TRANSPORT EVALUATION IN LAYERED IN2SE3 SEMICONDUCTOR

被引：0
|
作者：
LELIDIS, I
JULIEN, C
SIAPKAS, D
BALKANSKI, M
机构：
[1] UNIV PARIS 06,CNRS,PHYS SOLIDES LAB,4 PL JUSSIEU,F-75252 PARIS 05,FRANCE
[2] ARISTOTELIAN UNIV SALONIKA,SOLID STATE SECT,GR-54006 SALONIKA,GREECE
来源：
PHYSICA SCRIPTA | 1991年 / 44卷 / 06期
关键词：
D O I：
10.1088/0031-8949/44/6/019
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
This paper presents a method of rapid evaluation of the transport parameters from the fit of the infrared reflectivity parameters of doped layered semiconductors. The plasma frequency omega-p and the related damping factor gamma-p have been calculated for the case of In2Se3 using a method which gives the minimum reflectivity R(min) as a function of the frequency of this minimum omega-min for different values of the plasmon parameters. The results are compared with the corresponding fits deduced from the measurements in far-infrared in the region between 8 and 700 cm-1 at room temperature. Calculated values are compared with experimental data.
引用
收藏
页码：617 / 619
页数：3
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