DISTRIBUTED CHANNEL MODEL FOR HEMT SIGNAL AND NOISE PARAMETERS

被引：0
|
作者：
GARDNER, P
PAUL, DK
机构：
[1] Department of Electrical Engineering & Electronics, UMIST, Manchester M60 1QD
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 22期
关键词：
NOISE; MODELING; EQUIVALENT CIRCUITS;
D O I：
10.1049/el:19921322
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new simple model for the signal and noise properties of a microwave FET or HEMT avoids the need for any explicit correlation between gate and drain noise sources by distributing the drain-to-gate capacitance and the drain noise source along the conducting channel. The new model applied to a commercial HEMT chip demonstrates a very good fit to measured scattering and noise parameter data.
引用
收藏
页码：2063 / 2064
页数：2
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