ION-BEAM DOPING OF MBE SILICON BY AS+

被引：7
|
作者：
HOUGHTON, DC [1 ]
DENHOFF, MW [1 ]
JACKMAN, TE [1 ]
SWANSON, ML [1 ]
PARIKH, N [1 ]
机构：
[1] UNIV N CAROLINA, DEPT PHYS & ASTRON, CHAPEL HILL, NC 27514 USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 12期
关键词：
D O I：
10.1149/1.2095512
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：3109 / 3113
页数：5
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