PSEUDOPOTENTIAL CALCULATION OF STACKING-FAULT ENERGY IN SILICON

被引：12
|
作者：
CHEN, LJ
FALICOV, LM
机构：
[1] UNIV CALIF,DEPT PHYS,BERKELEY,CA 94720
[2] LAWRENCE BERKELEY LAB,INORG MAT RES DIV,BERKELEY,CA 94720
来源：
PHILOSOPHICAL MAGAZINE | 1974年 / 29卷 / 01期
关键词：
D O I：
10.1080/14786437408213549
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1 / 8
页数：8
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