PSEUDOPOTENTIAL CALCULATIONS OF STACKING-FAULT ENERGIES IN SILICON

被引：2
|
作者：
KRAUSE, CW [1 ]
机构：
[1] UNIV OXFORD,DEPT MET & SCI MAT,OXFORD,ENGLAND
来源：
PHILOSOPHICAL MAGAZINE | 1976年 / 33卷 / 01期
关键词：
D O I：
10.1080/14786437608221106
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：207 / 208
页数：2
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