DETRIMENTAL INFLUENCE OF STACKING-FAULTS ON THE REFRESH TIME OF MOS MEMORIES

被引：25
|
作者：
STRACK, H
MAYER, KR
KOLBESEN, BO
机构：
来源：
SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 02期
关键词：
D O I：
10.1016/0038-1101(79)90105-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：135 / +
页数：1
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