DETRIMENTAL INFLUENCE OF STACKING-FAULTS ON THE REFRESH TIME OF MOS MEMORIES

被引：25
|
作者：
STRACK, H
MAYER, KR
KOLBESEN, BO
机构：
来源：
SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 02期
关键词：
D O I：
10.1016/0038-1101(79)90105-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：135 / +
页数：1
相关论文
共 50 条
  • [31] STACKING-FAULTS IN UPT3
    ARONSON, MC
    CLARKE, R
    DEMCZYK, BG
    COLES, BR
    SMITH, JL
    DEVISSER, A
    VORENKAMP, T
    FRANSE, JJM
    PHYSICA B-CONDENSED MATTER, 1993, 186-88 : 788 - 791
  • [32] STRUCTURE OF DAVYNE AND IMPLICATIONS FOR STACKING-FAULTS
    HASSAN, I
    GRUNDY, HD
    CANADIAN MINERALOGIST, 1990, 28 : 341 - 349
  • [33] CONSTRICTIONS IN STACKING-FAULTS OF DISLOCATIONS IN GERMANIUM
    PACKEISER, G
    HAASEN, P
    PHILOSOPHICAL MAGAZINE, 1977, 35 (03): : 821 - 827
  • [34] INFLUENCE OF ABNORMAL ABSORPTION ON IMAGE CONTRAST OF STACKING-FAULTS IN SECTIONAL CRYSTALS
    HORL, EM
    MIKROSKOPIE, 1973, 28 (11-1) : 354 - 354
  • [35] THE SHRINKAGE AND GROWTH OF OXIDATION STACKING-FAULTS IN SILICON AND THE INFLUENCE OF BULK OXYGEN
    HU, SM
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3666 - 3671
  • [36] EFFECT OF SWIRLS AND STACKING-FAULTS ON MINORITY-CARRIER LIFETIME IN SILICON MOS CAPACITORS
    USAMI, A
    OKURA, K
    MAKI, T
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (05) : L63 - +
  • [37] ANOMALOUS CONTRAST FROM STACKING-FAULTS
    SHAW, MP
    SELF, PG
    STOBBS, WM
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (61): : 297 - 300
  • [38] LATTICE DISPLACEMENTS IN VICINITY OF STACKING-FAULTS
    HARRISON, EA
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 19 (02): : 487 - 491
  • [39] ELECTRICALLY ACTIVE STACKING-FAULTS IN SILICON
    MATARE, HF
    RAVI, KV
    VARKER, CJ
    VOLK, CE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1790 - 1791
  • [40] AXIAL DECHANNELING .4. STACKING-FAULTS
    GARTNER, K
    HEHL, K
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 12 (02): : 205 - 211
12345