RAMAN-SCATTERING FROM BORON-IMPLANTED LASER ANNEALED SILICON - COMMENTS

被引：6
|
作者：
FORMAN, RA
BELL, MI
MYERS, DR
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 06期
关键词：
D O I：
10.1063/1.329251
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：4337 / 4339
页数：3
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