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- [1] Observation of boron bound excitons in boron-implanted and annealed natural IIa diamondsAPPLIED PHYSICS LETTERS, 1997, 71 (18) : 2668 - 2670Sternschulte, HWahl, SThonke, KSauer, RDalmer, MRonning, CHofsass, H
- [2] CHARACTERIZATION OF BORON-IMPLANTED, LASER-ANNEALED SILICONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C138 - C138YOUNG, RTWHITE, CWNARAYAN, JCLARK, GJCHRISTIE, WH
- [3] ELECTRON-PARAMAGNETIC-RESONANCE OF BORON-IMPLANTED NATURAL DIAMONDS AND EPITAXIAL DIAMOND FILMSDIAMOND AND RELATED MATERIALS, 1993, 2 (08) : 1164 - 1167ERCHAK, DPEFIMOV, VGAZARKO, IIDENISENKO, AVPENINA, NMSTELMAKH, VFVARICHENKO, VSZAITSEV, AMMELNIKOV, AA
- [4] UNIDIRECTIONAL CONTRACTION IN BORON-IMPLANTED LASER-ANNEALED SILICONAPPLIED PHYSICS LETTERS, 1978, 32 (12) : 801 - 803LARSON, BCWHITE, CWAPPLETON, BR
- [5] DISTRIBUTION OF CONDENSED DEFECT STRUCTURES FORMED IN ANNEALED BORON-IMPLANTED SILICONPROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1969, 311 (1504): : 75 - &BICKNELL, RW
- [6] INFRARED REFLECTIVITY AND TRANSMISSIVITY OF BORON-IMPLANTED, LASER-ANNEALED SILICONJOURNAL OF APPLIED PHYSICS, 1980, 51 (10) : 5245 - 5249ENGSTROM, H
- [7] BORON-IMPLANTED PROFILES IN DIAMONDAPPLIED PHYSICS LETTERS, 1976, 28 (01) : 7 - 8BLANCHARD, BCOMBASSON, JLBOURGOIN, JC
- [9] RAMAN-SCATTERING FROM BORON-IMPLANTED LASER ANNEALED SILICON - COMMENTSJOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4337 - 4339FORMAN, RABELL, MIMYERS, DR
- [10] RAMAN-SCATTERING FROM BORON-IMPLANTED LASER-ANNEALED SILICONJOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2921 - 2925ENGSTROM, HBATES, JB