RAMAN-SCATTERING FROM BORON-IMPLANTED LASER ANNEALED SILICON - COMMENTS

被引：6

|

作者：

FORMAN, RA

BELL, MI

MYERS, DR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 06期

关键词：

D O I：

10.1063/1.329251

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4337 / 4339

页数：3

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