Observation of boron bound excitons in boron-implanted and annealed natural Ila diamonds

被引：0
|
作者：
Sternschulte, H.
Wahl, S.
Thonke, K.
Sauer, R.
Dalmer, M.
Ronning, C.
Hofsass, H.
机构：
来源：
Applied Physics Letters | 1997年 / 71卷 / 18期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] DRY WEAR BEHAVIOR OF BORON-IMPLANTED AND NITROGEN-IMPLANTED STEELS
    PALMETSHOFER, L
    FADERL, J
    LEHNER, F
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1989, 114 : 173 - 178
  • [42] RAPID THERMAL ANNEALING OF ARSENIC AND BORON-IMPLANTED SILICON
    NARAYAN, J
    HOLLAND, OW
    EBY, RE
    WORTMAN, JJ
    OZGUZ, V
    ROZGONYI, GA
    APPLIED PHYSICS LETTERS, 1983, 43 (10) : 957 - 959
  • [43] Switching phenomena in boron-implanted amorphous carbon films
    Khan, RUA
    Silva, SRP
    DIAMOND AND RELATED MATERIALS, 2001, 10 (3-7) : 1036 - 1039
  • [44] CONDUCTIVITY OF BORON-IMPLANTED POLYCRYSTALLINE THIN SILICON FILMS
    MANSOUR, F
    BOUCHEMAT, M
    BOUKEZZATA, M
    TOUIDJEN, NH
    BIELLEDASPET, D
    MIROUH, K
    THIN SOLID FILMS, 1995, 261 (1-2) : 12 - 17
  • [45] BORON-IMPLANTED 6H-SIC DIODES
    GHEZZO, M
    BROWN, DM
    DOWNEY, E
    KRETCHMER, J
    KOPANSKI, JJ
    APPLIED PHYSICS LETTERS, 1993, 63 (09) : 1206 - 1208
  • [46] ELECTRICALLY INACTIVE GRAIN-BOUNDARIES IN RAPID THERMAL ANNEALED BORON-IMPLANTED POLYCRYSTALLINE SILICON FILMS
    ALMAGGOUSSI, A
    SICART, J
    ROBERT, JL
    CHAUSSEMY, G
    LAUGIER, A
    APPLIED PHYSICS LETTERS, 1990, 56 (25) : 2536 - 2538
  • [47] Diamond FETs on boron-implanted and high-pressure and high-temperature annealed homoepitaxial diamond
    Ueda, Kenji
    Yamauchi, Yoshiharu
    Kasu, Makoto
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09): : 3175 - 3177
  • [48] OPTICAL AND STRUCTURAL CHARACTERIZATION OF HEAVILY BORON-IMPLANTED CDTE
    BOWMAN, RC
    ALT, RL
    ADAMS, PM
    KNUDSEN, JF
    JAMIESON, DN
    DOWNING, RG
    JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 768 - 777
  • [49] A STUDY OF CHANNELING AND INDUCED DAMAGE IN BORON-IMPLANTED SILICON
    DUENAS, S
    CASTAN, E
    BARBOLLA, J
    MONTSERRAT, J
    TAMAYO, EL
    DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES, 1994, (135): : 47 - 50
  • [50] Cytotoxicity evaluation of boron-implanted nickel-titanium.
    Nguyen, J
    Huang, GTJ
    Serene, T
    JOURNAL OF DENTAL RESEARCH, 1997, 76 : 2513 - 2513
12345