共 50 条
- [21] CONDUCTIVITY AND HALL-EFFECT OF HEAVILY DOPED SEMICONDUCTORS AT LOW-TEMPERATURES IN A WEAK MAGNETIC-FIELD[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 49 (01): : 179 - &VANCONG, HMESNARD, G
- [22] THE BOLTZMANN RESISTIVITY OF HEAVILY DOPED SEMICONDUCTORS - DEPENDENCE ON HOW THE SCATTERER IS EMBEDDED[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (28): : 4989 - 4999ENGSTROM, L
- [23] THERMOELECTRIC EFFECTS OF HEAVILY DOPED SEMICONDUCTORS AT LOW-TEMPERATURES[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 50 (01): : 53 - &VANCONG, HMESNARD, G
- [24] SEEBECK COEFFICIENT IN SEMICONDUCTORS AT HIGH TEMPERATURES[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (03) : C64 - C65URE, RW
- [25] OSCILLATORY MAGNETORESISTANCE OF HEAVILY DOPED SEMICONDUCTORS AT LOW-TEMPERATURES[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (22): : 3275 - 3281VANCONG, H
- [26] Electrical resistivity, hall coefficient, and thermopower of optimally doped high-Tc superconductors[J]. JETP Letters, 2015, 100 : 712 - 718I. A. LarionovA. F. Barabanov
- [27] Electrical Resistivity, Hall Coefficient, and Thermopower of Optimally Doped High-Tc Superconductors[J]. JETP LETTERS, 2015, 100 (11) : 712 - 718Larionov, I. A.Barabanov, A. F.
- [28] APPARATUS FOR MEASURING TEMPERATURE DEPENDENCE OF PHOTO-HALL EFFECTS IN HIGH-RESISTIVITY PHOTOCONDUCTORS[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (07): : 721 - &MACDONALD, HEBUBE, RH
- [29] Temperature coefficient of resistivity in heavily doped oxygen-rich polysilicon[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (12) : G725 - G733Rydberg, MSmith, U
- [30] EFFECT OF LAMINAR INHOMOGENEITY ON RESULTS OF MEASURING RESISTIVITY AND HALL EFFECT IN SEMICONDUCTORS[J]. INDUSTRIAL LABORATORY, 1968, 34 (03): : 367 - &VORONKOV, VVLEVINZON, DIIGLITSYN, MI