EFFECT OF LAMINAR INHOMOGENEITY ON RESULTS OF MEASURING RESISTIVITY AND HALL EFFECT IN SEMICONDUCTORS

被引：0

作者：

VORONKOV, VV

LEVINZON, DI

IGLITSYN, MI

机构：

来源：

INDUSTRIAL LABORATORY | 1968年 / 34卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：367 / &

共 50 条

[1] HALL-EFFECT IN HIGH RESISTIVITY SEMICONDUCTORS
DARIE, R
[J]. STUDII SI CERCETARI DE FIZICA, 1972, 24 (04): : 495 - +
[2] INSTALLATION FOR MEASURING THE HALL EFFECT IN SEMICONDUCTORS
BOGOMOLOV, VN
MIASNIKOV, VA
[J]. SOVIET PHYSICS-TECHNICAL PHYSICS, 1957, 2 (06): : 1103 - 1108
[3] APPARATUS FOR MEASURING RESISTIVITY AND HALL COEFFICIENT OF SEMICONDUCTORS
DAUPHINEE, TM
MOOSER, E
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1955, 26 (07): : 660 - 664
[4] AN EXTENSION OF GOLDSMIDS BRIDGE FOR MEASURING HALL EFFECT IN SEMICONDUCTORS
PARODO, A
ZEDDA, A
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1969, 2 (08): : 748 - &
[5] APPARATUS FOR MEASUREMENT OF HALL EFFECT IN SEMICONDUCTORS OF LOW MOBILITY AND HIGH RESISTIVITY
HERMANN, AM
HAM, JS
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (11): : 1553 - &
[6] UTILIZATION OF THE HALL EFFECT IN SEMICONDUCTORS FOR THE PURPOSE OF MEASURING ELECTRIC POWER
BERMAN, LS
[J]. SOVIET PHYSICS-TECHNICAL PHYSICS, 1957, 2 (06): : 1088 - 1091
[7] THE HALL EFFECT IN SEMICONDUCTORS
MANSFIELD, R
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (08): : 862 - 865
[8] INTERPRETATION OF HALL EFFECT AND RESISTIVITY DATA IN PBS AND SIMILAR BINARY COMPOUND SEMICONDUCTORS
SCANLON, WW
[J]. PHYSICAL REVIEW, 1953, 92 (06): : 1573 - 1575
[9] EFFECT OF STRONG ELECTRIC FIELDS ON MAGNETO-RESISTIVITY AND HALL COEFFICIENT IN SEMICONDUCTORS
KOLODZIEJCZAK, J
[J]. PHYSICA STATUS SOLIDI, 1967, 23 (01): : 423 - +
[10] INTERPRETATION OF RESULTS OF MEASUREMENTS OF HALL-EFFECT IN INHOMOGENEOUS SEMICONDUCTORS
ABESSONOVA, LN
DOBROVOLSKII, VN
ZHARKIKH, YS
FROLOV, OS
SHIK, AY
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 244 - 245

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