ANALYSIS OF TEMPERATURE-DEPENDENT HALL CONDUCTIVITY IN SILICON INVERSION-LAYERS IN STRONG MAGNETIC-FIELDS BY A MOBILITY EDGE MODEL

被引：11

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作者：

KAWAJI, S

WAKABAYASHI, JI

MORIYAMA, J

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1981年 / 50卷 / 12期

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D O I：

10.1143/JPSJ.50.3839

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：3839 / 3840

页数：2

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