A temperature-dependent MOSFET inversion layer carrier mobility model for device and circuit simulation

被引：21
|
作者：
Cheng, BH
Woo, J
机构：
[1] Department of Electrical Engineering, University of California, Los Angeles
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 02期
关键词：
D O I：
10.1109/16.557730
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new semi-empirical model for electron and hole mobilities in MOSFET inversion layers is proposed. For the first time, the magnitude of the key parameter eta, which defines the effective transverse field, is found to be a continuous function of temperature for both electrons and holes. The effective transverse field dependences of the universal mobility curves are observed to differ between the electrons and holes, particularly at low temperatures. The proposed model is verified by comparison of experimental data and simulated MOSFET I-V characteristics over a temperature range from 77 K to 343 K.
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页码：343 / 345
页数：3
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