A UNIVERSAL MOSFET MOBILITY DEGRADATION MODEL FOR CIRCUIT SIMULATION

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作者：

YERIC, GM

TASCH, AF

BANERJEE, SK

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来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1990年 / 9卷 / 10期

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TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

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页码：1123 / 1126

页数：4

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