PHOSPHORUS DIFFUSION IN SILICON DURING RAPID THERMAL ANNEALING

被引：3
|
作者：
NANU, L
EVANS, AGR
机构：
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1989年 / 4卷 / 09期
关键词：
D O I：
10.1088/0268-1242/4/9/002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：711 / 714
页数：4
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