LATTICE DEFECT STRUCTURE OF DEGRADED INGAASP-INP DOUBLE-HETEROSTRUCTURE LASERS

被引：33

作者：

ISHIDA, K ^{[1
]}

KAMEJIMA, T ^{[1
]}

MATSUMOTO, Y ^{[1
]}

ENDO, K ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,OPT ELECTR RES LABS,KAWASAKI 211,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 01期

关键词：

D O I：

10.1063/1.92917

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：16 / 17

页数：2

共 50 条

[41] INFLUENCE OF SUPERSATURATED MELT FOR INP GROWTH ON INP-INGAASP INTERFACE OF DOUBLE-HETEROSTRUCTURE LASER WAFERS
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[50] ACCELERATED AGING CHARACTERISTICS OF INGAASP-INP BURIED HETEROSTRUCTURE LASERS EMITTING AT 1.3 MU-M
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