COMPATIBLE VVMOS AND NMOS TECHNOLOGY FOR POWER MOS-ICS

被引：0
|
作者：
LANE, WA
SALAMA, CAT
机构：
来源：
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1981年 / 128卷 / 03期
关键词：
Compendex;
D O I：
10.1049/ip-i-1.1981.0026
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SEMICONDUCTOR DEVICES, MOS
引用
收藏
页码：87 / 91
页数：5
相关论文
共 50 条
  • [1] EFFECT OF SUBSTRATE ON MOSTS AND MOS-ICS, MAINLY ON DC CHARACTERISTICS
    HAYASHI, Y
    TARUI, Y
    ELECTRONICS & COMMUNICATIONS IN JAPAN, 1972, 54 (05): : 93 - +
  • [2] 用于MOS功率集成电路的VVMOS和NMOS相容技术研究
    张蓓榕
    汤世豪
    袁美英
    徐静芳
    华东师范大学学报(自然科学版), 1984, (02) : 44 - 46
  • [3] A novel technique for p-well NMOS power ICs
    Cao, GJ
    Liu, SQ
    Ying, JH
    Xu, YZ
    Qin, ZX
    MICROELECTRONICS JOURNAL, 1999, 30 (02) : 101 - 103
  • [4] P-CHANNEL VERSUS N-CHANNEL IN MOS-ICS OF SUB-MICRON CHANNEL LENGTHS
    DANG, LM
    IWAI, H
    NISHI, Y
    TAGUCHI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 107 - 112
  • [5] MOS POWER DRIVER ICS FOR DC MOTORS
    HATTORI, M
    TACHIYAMA, T
    NEC RESEARCH & DEVELOPMENT, 1988, (90): : 1 - 9
  • [6] THE MOS CONTROLLED THYRISTOR (MCT) AND SMART POWER ICS
    TEMPLE, VAK
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : C113 - C113
  • [7] 'Power at Gigahertz frequency using silicon NMOS technology'
    Johansson, Ted
    Litwin, Andrej
    Proceedings of the Nordic Semiconductor Meeting, 1990,
  • [8] STACKED TRANSISTORS CMOS (ST-MOS), AN NMOS TECHNOLOGY MODIFIED TO CMOS
    COLINGE, JP
    DEMOULIN, E
    LOBET, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 585 - 589
  • [9] AN AC POWER MOS TECHNOLOGY
    HARTRANFT, M
    HENDRICKSON, TE
    BUCKENDORF, L
    KOELSCH, R
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2193 - 2193
  • [10] DOUBLE RESURF DEVICE TECHNOLOGY FOR POWER ICS
    KOISHIKAWA, Y
    TAKAHASHI, M
    YANAGIGAWA, H
    KURIYAMA, T
    NEC RESEARCH & DEVELOPMENT, 1994, 35 (04): : 438 - 443
12345