P-CHANNEL VERSUS N-CHANNEL IN MOS-ICS OF SUB-MICRON CHANNEL LENGTHS

被引：5
|
作者：
DANG, LM [1 ]
IWAI, H [1 ]
NISHI, Y [1 ]
TAGUCHI, S [1 ]
机构：
[1] TOSHIBA CORP,DIV SEMICOND,SEMICOND ENGN LAB,KAWASAKI 210,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷
关键词：
D O I：
10.7567/JJAPS.19S1.107
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：107 / 112
页数：6
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