HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC

被引:96
|
作者
MIMURA, T
JOSHIN, K
HIYAMIZU, S
HIKOSAKA, K
ABE, M
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D O I
10.1143/JJAP.20.L598
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O59 [应用物理学];
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页码:L598 / L600
页数:3
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