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- [1] HIGH-FREQUENCY APPLICATION OF HOT-ELECTRONS IN SUPERLATTICES[J]. PHYSICA B & C, 1985, 134 (1-3): : 502 - 505HO, JGRONDIN, ROBLAKEY, PAPOROD, W
- [2] HIGH-FREQUENCY ELECTROSTATIC INSTABILITIES IN A PLASMA WITH A SMALL FRACTION OF HOT-ELECTRONS[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 37 (02) : 460 - 465SHIMIZU, KTODOROKI, JSATO, M
- [3] RECOMBINATION OF HOT-ELECTRONS HEATED BY A HIGH-FREQUENCY ELECTRIC-FIELD[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (01): : 7 - +ZHDANOVA, NGKAGAN, MSKALASHNI.SGLANDSBERG, EG
- [4] HIGH-FREQUENCY PROPERTIES OF BIPOLAR HETEROTRANSISTORS UNDER CONDITIONS OF DIFFUSION TRANSPORT OF HOT-ELECTRONS IN THE BASE[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (03): : 298 - 300RYZHIL, VIZAKHAROVA, AAPANASOV, SN
- [5] HIGH-FREQUENCY CHARACTERISTICS OF BIPOLAR HETEROTRANSISTORS UNDER CONDITIONS OF CONSERVATIVE TRANSPORT OF HOT-ELECTRONS IN THE BASE[J]. SOVIET MICROELECTRONICS, 1985, 14 (06): : 269 - 272Zakharova, AARyzhii, VI
- [6] NOISE AND DIFFUSIVITY OF HOT-ELECTRONS IN N-TYPE INSB[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC7): : 215 - 220BAREIKIS, VGALDIKAS, AMILIUSYTE, RPOZHELA, JVIKTORAVICIUS, V
- [7] NOISE AND DIFFUSION OF HOT-ELECTRONS IN N-TYPE INSB[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (10): : 1165 - 1167BAREIKIS, VVIKTORAVICHYUS, VGALDIKAS, AMILYUSHITE, RPOZHELA, Y
- [8] CALCULATIONS OF HIGH-FREQUENCY RESPONSE OF 2-DIMENSIONAL HOT-ELECTRONS IN GAAS QUANTUM-WELLS[J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (01) : 283 - 287SARKAR, SKGHOSH, PKCHATTOPADHYAY, D
- [9] ENERGY-LOSS MECHANISMS OF HOT-ELECTRONS IN N-INSB[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (33): : 5151 - 5169SHIMOMAE, KHIROSE, YHAMAGUCHI, C
- [10] DETAILED CALCULATION OF ENERGY RELAXATION-TIME OF HOT-ELECTRONS IN INSB[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) : 3154 - 3155KOBAYASHI, T