共 50 条
- [1] HIGH-FREQUENCY PROPERTIES OF BIPOLAR HETEROTRANSISTORS UNDER CONDITIONS OF DIFFUSION TRANSPORT OF HOT-ELECTRONS IN THE BASE[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (03): : 298 - 300RYZHIL, VIZAKHAROVA, AAPANASOV, SN
- [2] HIGH-FREQUENCY CHARACTERISTICS OF BALLISTIC BIPOLAR HETEROTRANSISTORS[J]. RADIOTEKHNIKA I ELEKTRONIKA, 1984, 29 (11): : 2250 - 2256RYZHY, VIFEDIRKO, VA
- [3] CHARACTERISTICS OF HIGH-FREQUENCY PROPERTIES OF BALLISTIC BIPOLAR HETEROTRANSISTORS[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (05): : 527 - 530RYZHII, VIFEDIRKO, VAKHMYROVA, II
- [4] HIGH-FREQUENCY APPLICATION OF HOT-ELECTRONS IN SUPERLATTICES[J]. PHYSICA B & C, 1985, 134 (1-3): : 502 - 505HO, JGRONDIN, ROBLAKEY, PAPOROD, W
- [5] HIGH-FREQUENCY PROPERTIES OF HOT-ELECTRONS IN INSB[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (06): : 660 - 663POZHELA, YREKLAITIS, A
- [6] HIGH-FREQUENCY CHARACTERISTICS FOR BIPOLAR HETEROTRANSISTORS WITH BASE INTERVALLEY NONEQUILIBRIUM-CARRIER REDISTRIBUTION[J]. SOVIET MICROELECTRONICS, 1989, 18 (02): : 94 - 97ZAKHAROVA, AA
- [7] HIGH-FREQUENCY ELECTROSTATIC INSTABILITIES IN A PLASMA WITH A SMALL FRACTION OF HOT-ELECTRONS[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 37 (02) : 460 - 465SHIMIZU, KTODOROKI, JSATO, M
- [8] RECOMBINATION OF HOT-ELECTRONS HEATED BY A HIGH-FREQUENCY ELECTRIC-FIELD[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (01): : 7 - +ZHDANOVA, NGKAGAN, MSKALASHNI.SGLANDSBERG, EG
- [9] Effects of quasi-ballistic base transport on the high-frequency characteristics of bipolar transistors[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (04) : 618 - 626Vaidyanathan, MPulfrey, DL
- [10] BALLISTIC VERSUS DIFFUSIVE BASE TRANSPORT IN THE HIGH-FREQUENCY CHARACTERISTICS OF BIPOLAR-TRANSISTORS[J]. APPLIED PHYSICS LETTERS, 1992, 60 (22) : 2770 - 2772GRINBERG, AALURYI, S