共 50 条
- [1] HIGH-FREQUENCY CHARACTERISTICS OF BIPOLAR HETEROTRANSISTORS UNDER CONDITIONS OF CONSERVATIVE TRANSPORT OF HOT-ELECTRONS IN THE BASE [J]. SOVIET MICROELECTRONICS, 1985, 14 (06): : 269 - 272
- [2] HIGH-FREQUENCY PROPERTIES OF HOT-ELECTRONS IN INSB [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (06): : 660 - 663
- [3] HIGH-FREQUENCY APPLICATION OF HOT-ELECTRONS IN SUPERLATTICES [J]. PHYSICA B & C, 1985, 134 (1-3): : 502 - 505
- [4] CHARACTERISTICS OF HIGH-FREQUENCY PROPERTIES OF BALLISTIC BIPOLAR HETEROTRANSISTORS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (05): : 527 - 530
- [5] HIGH-FREQUENCY CHARACTERISTICS OF BALLISTIC BIPOLAR HETEROTRANSISTORS [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1984, 29 (11): : 2250 - 2256
- [7] HIGH-FREQUENCY CHARACTERISTICS FOR BIPOLAR HETEROTRANSISTORS WITH BASE INTERVALLEY NONEQUILIBRIUM-CARRIER REDISTRIBUTION [J]. SOVIET MICROELECTRONICS, 1989, 18 (02): : 94 - 97
- [9] RECOMBINATION OF HOT-ELECTRONS HEATED BY A HIGH-FREQUENCY ELECTRIC-FIELD [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (01): : 7 - +