CONTRIBUTION TO ELECTRON-BEAM ANNEALING OF HIGH-DOSE ION-IMPLANTED POLYSILICON

被引：3

|

作者：

KRIMMEL, EF

LUTSCH, AGK

DOERING, E

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 71卷 / 02期

关键词：

D O I：

10.1002/pssa.2210710219

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：451 / 456

页数：6

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