RESIDUAL GERMANIUM INCORPORATION IN MOCVD GROWN GAAS

被引：0
|
作者：
REED, AD [1 ]
LEE, B [1 ]
BOSE, SS [1 ]
STILLMAN, GE [1 ]
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES <D> | 1989年 / 96期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
New evidence is presented which identifies the source of residual germanium donors in MOCVD grown GaAs and the incorporation mechanism. An optimized experimental design was employed which resolved the effects of gas flow dynamics from thermodynamics and substrate catalytic effects resulting in a clearer picture of the germanium incorporation mechanisms.
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页码：165 / 168
页数：4
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