A STUDY OF SILICON INCORPORATION IN GAAS MOCVD LAYERS

被引：38
|
作者：
VEUHOFF, E
KUECH, TF
MEYERSON, BS
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期
关键词：
D O I：
10.1149/1.2114261
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1958 / 1961
页数：4
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