Photoreflectance characterisation of GaAs and GaAs/GaAlAs structures grown by MOCVD

被引：32

作者：

Misiewicz, J ^{[1
]}

Jezierski, K ^{[1
]}

Sitarek, P ^{[1
]}

Markiewicz, P ^{[1
]}

Korbutowicz, R ^{[1
]}

Panek, M ^{[1
]}

Sciana, B ^{[1
]}

Tlaczala, M ^{[1
]}

机构：

[1] WROCLAW TECH UNIV,INST ELECTRON TECHNOL,PL-50372 WROCLAW,POLAND

来源：

ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS | 1995年 / 5卷 / 06期

关键词：

photoreflectance spectroscopy; MOCVD; GaAs; GaAlAs; heterostructures; quantum wells; surface; interface; Kramers-Kronig analysis;

D O I：

10.1002/amo.860050605

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

Epitaxial undoped and doped (Si and tn) GaAs and GaAlAs layers as well as heterostructures Of GaAs/GaAlAs have been grown in an atmospheric pressure, vertical MOCVD system. Room temperature photoreflectance (PR) has been applied to characterise the layers and heterostructures as well as multiple quantum wells, The surface- and interface-related PR has been studied by application of Kramers-Kronig analysis, A decomposition of the PR spectrum into spectra connected with the surface region and with the interface has been proposed.

引用

页码：321 / 327

页数：7

共 50 条

[1] PHOTOREFLECTANCE SPECTROSCOPY OF MOCVD GROWN GAAS EPILAYERS
MISIEWICZ, J
MARKIEWICZ, P
REBISZ, J
GUMIENNY, Z
PANEK, M
SCIANA, B
TLACZALA, M
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1994, 183 (02): : K43 - K46
[2] RECTIFYING GAAS-GAALAS-GAAS STRUCTURES BY MOCVD COMPOSITIONAL GRADING
ESCOBOSA, A
KRAUTLE, H
BENEKING, H
ELECTRONICS LETTERS, 1982, 18 (20) : 888 - 889
[3] ULTRATHIN GAAS/GAALAS LAYERS GROWN BY MOCVD AND THEIR STRUCTURAL CHARACTERIZATION
WATANABE, N
MORI, Y
SURFACE SCIENCE, 1986, 174 (1-3) : 10 - 18
[4] PHOTOREFLECTANCE STUDY OF GAAS AND GAAS/GAALAS SINGLE QUANTUM-WELLS GROWN ON (001)SI SUBSTRATES
QIANG, H
LOOK, E
POLLAK, FH
SHUM, K
TAKIGUCHI, Y
ALFANO, RR
FANG, SF
MORKOC, H
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1994, 32 (04) : 405 - 411
[5] GAAS/GAALAS MULTILAYER STRUCTURES GROWN BY LPE METHOD
GOROG, T
LENDVAY, E
RAKOVICS, V
ACTA PHYSICA HUNGARICA, 1987, 61 (02) : 149 - 152
[6] Room temperature photoreflectance of MOCVD-grown InAs GaAs quantum dots
Sek, G
Misiewicz, J
Ryczko, K
Kubisa, M
Heinrichsdorff, F
Stier, O
Bimberg, D
SOLID STATE COMMUNICATIONS, 1999, 110 (12) : 657 - 660
[7] A FRANZ-KELDYSH MODEL FOR PHOTOREFLECTANCE FROM GAAS/GAALAS HETEROJUNCTION STRUCTURES
BATCHELOR, RA
HAMNETT, A
JOURNAL OF APPLIED PHYSICS, 1992, 71 (05) : 2414 - 2422
[8] DIFFERENTIAL PHOTOREFLECTANCE AND RAMAN STUDIES OF MBE-GROWN GAAS/SI/GAAS STRUCTURES
MELENDEZLIRA, M
JIMENEZSANDOVAL, S
LOPEZLOPEZ, M
HERNANDEZCALDERON, I
YAMAUCHI, Y
KAWAI, T
PAK, K
YONEZU, H
JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 : A357 - A358
[9] Polarization characteristics of MOCVD grown GaAs/GaAlAs CBH surface emitting lasers
Shimizu, Mitsuaki
Koyama, Fumio
Iga, Kenichi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (09): : 1774 - 1775
[10] GAAS/GAALAS SURFACE EMITTING IR LED WITH BRAGG REFLECTOR GROWN BY MOCVD
KATO, T
SUSAWA, H
HIROTANI, M
SAKA, T
OHASHI, Y
SHICHI, E
SHIBATA, S
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 832 - 835

← 1 2 3 4 5 →