共 50 条
- [43] Interface diffusion and electromigration failure in narrow aluminium lines with barrier layers [J]. STRESS-INDUCED PHENOMENA IN METALLIZATION - THIRD INTERNATIONAL WORKSHOP, 1996, (373): : 279 - 292
- [45] Prediction of Electromigration Induced Voids and Time to Failure for Solder Joint of a Wafer Level Chip Scale Package [J]. IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2010, 33 (03): : 544 - 552
- [49] THE EFFECT OF IMPURITIES ON THE FORMATION OF VOIDS BY ELECTROMIGRATION IN METALLIC ALLOYS [J]. JOURNAL OF PHYSICS F-METAL PHYSICS, 1986, 16 (04): : 407 - 412
- [50] Number of voids formed on a line: parameter for electromigration lifetime [J]. J Vac Sci Technol B, 2 (687):