Lattice degradation by moving voids during reversible electromigration

被引:6
|
作者
Sindermann, S. P.
Latz, A.
Spoddig, D.
Schoeppner, C.
Wolf, D. E.
Dumpich, G.
Heringdorf, F-J Meyer Zu
机构
[1] Univ Duisburg Essen, Fac Phys, D-47057 Duisburg, Germany
[2] Univ Duisburg Essen, Ctr Nanointegrat Duisburg Essen CENIDE, D-47057 Duisburg, Germany
关键词
SHAPE; MICROSTRUCTURE; INTERCONNECTS; NANOWIRES; FAILURE; LINES;
D O I
10.1063/1.4889816
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electromigration driven void motion is studied in Ag wires with an initially well-defined single crystal lattice by in situ scanning electron microscopy. Voids are moving in opposite direction to the electron flow. When the electron current is reversed, voids exactly retrace their previous motion path with an increased drift velocity: The microstructure of the Ag wire "remembers" the motion path of the initial voids. To investigate the nature of this memory effect, we analyzed the crystal lattice with electron backscatter diffraction after passing of a void. The results show a permanent lattice degradation caused by the moving void. The implication of this finding for the reversibility of EM will be discussed. (C) 2014 AIP Publishing LLC.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Lattice dependent motion of voids during electromigration
    Sindermann, S. P.
    Latz, A.
    Dumpich, G.
    Wolf, D. E.
    Heringdorf, F-J. Meyer Zu
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 113 (13)
  • [2] NUCLEATION OF VOIDS AND THEIR GROWTH DURING ELECTROMIGRATION
    SUHL, H
    TURNER, PA
    [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) : 4891 - 4895
  • [3] Modeling nucleation and growth of voids during electromigration
    Richards, D
    Adams, JB
    Borucki, L
    [J]. 1999 INTERNATIONAL CONFERENCE ON MODELING AND SIMULATION OF MICROSYSTEMS, 1999, : 471 - 474
  • [4] Investigation on the multi-voids formation during electromigration degradation in dual damascene Cu lines
    Bana, F.
    Arnaud, L.
    Ney, D.
    Wouters, Y.
    [J]. MICROELECTRONIC ENGINEERING, 2013, 112 : 130 - 132
  • [5] VOIDS ASSOCIATED WITH ELECTROMIGRATION IN METAL LINES
    MILNES, AG
    BAUER, CL
    [J]. SOLID-STATE ELECTRONICS, 1991, 34 (07) : 741 - 746
  • [6] A phase field model for the electromigration of intergranular voids
    Barrett, John W.
    Garcke, Harald
    Nuernberg, Robert
    [J]. INTERFACES AND FREE BOUNDARIES, 2007, 9 (02) : 171 - 210
  • [7] A simulation of asymmetrical voids evolution induced by electromigration
    Gao, YX
    Fan, H
    Xiao, Z
    [J]. MECHANICS OF MATERIALS, 2000, 32 (05) : 315 - 326
  • [8] Effects of microstructure on the formation, shape, and motion of voids during electromigration in passivated copper interconnects
    Choi, Z-S.
    Moenig, R.
    Thompson, C. V.
    [J]. JOURNAL OF MATERIALS RESEARCH, 2008, 23 (02) : 383 - 391
  • [9] Effects of microstructure on the formation, shape, and motion of voids during electromigration in passivated copper interconnects
    Z-S. Choi
    R. Mönig
    C.V. Thompson
    [J]. Journal of Materials Research, 2008, 23 : 383 - 391
  • [10] THE EFFECT OF IMPURITIES ON THE FORMATION OF VOIDS BY ELECTROMIGRATION IN METALLIC ALLOYS
    ZEHE, A
    ROPKE, G
    [J]. JOURNAL OF PHYSICS F-METAL PHYSICS, 1986, 16 (04): : 407 - 412