共 50 条
- [41] Theory of band gap bowing of disordered substitutional II–VI and III–V semiconductor alloys The European Physical Journal B, 2012, 85
- [43] Conduction-band effective mass and bandgap of ZnSnN2 earth-abundant solar absorber Scientific Reports, 7
- [45] Conduction-band effective mass and bandgap of ZnSnN2 earth-abundant solar absorber SCIENTIFIC REPORTS, 2017, 7
- [46] III-V diluted magnetic semiconductor: Substitutional doping of Mn in InAs PHYSICAL REVIEW B, 1996, 53 (08): : 4905 - 4909
- [47] Mapping the effective mass of electrons in III-V semiconductor quantum confined structures PHYSICAL REVIEW B, 2006, 73 (03):
- [48] Modeling of Charge and Quantum Capacitance in Low Effective Mass III-V FinFETs IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2016, 4 (06): : 396 - 401
- [49] Study on Crystal Orientation-dependent Effective mass in III-V Semiconductors 2015 2ND INTERNATIONAL CONFERENCE ON ELECTRICAL INFORMATION AND COMMUNICATION TECHNOLOGY (EICT), 2015, : 407 - 411
- [50] THEORETICAL-STUDY OF SUBSTITUTIONAL DEFECTS IN III-V SEMICONDUCTORS - INP PHYSICAL REVIEW B, 1994, 49 (16): : 10991 - 10998