III-V diluted magnetic semiconductor: Substitutional doping of Mn in InAs

被引：70
|
作者：
Soo, YL
Huang, SW
Ming, ZH
Kao, YH
Munekata, H
Chang, LL
机构：
[1] TOKYO INST TECHNOL,IMAGING SCI & ENGN LAB,YOKOHAMA,KANAGAWA 226,JAPAN
[2] HONG KONG UNIV SCI & TECHNOL,KOWLOON,HONG KONG
来源：
PHYSICAL REVIEW B | 1996年 / 53卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.53.4905
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Local structures around Mn in In1-xMnxAs films grown by molecular-beam epitaxy have been studied by using Mn K-edge extended x-ray-absorption fine-structure (EXAFS) technique. Substitution of Mn atoms for the In sites is found in samples either grown at low substrate temperatures (near 200 degrees C) or with a low Mn concentration (about 1 at. %). This result represents a significant extension of an earlier EXAFS study and serves as direct experimental evidence for III-V diluted magnetic semiconductors obtained by substitutional doping Of Mn impurities in InAs.
引用
收藏
页码：4905 / 4909
页数：5
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