ABSORPTION DUE TO BOUND EXCITONS IN SILICON

被引：74
|
作者：
DEAN, PJ
FLOOD, WF
KAMINSKY, G
机构：
来源：
PHYSICAL REVIEW | 1967年 / 163卷 / 03期
关键词：
D O I：
10.1103/PhysRev.163.721
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：721 / &
相关论文
共 50 条
  • [41] Emission and absorption lines of free and bound excitons in CuGaS2 crystals
    Matsumoto, T
    Shimojo, T
    Terasako, T
    Tanaka, K
    Tsuboi, N
    Iida, S
    TERNARY AND MULTINARY COMPOUNDS, 1998, 152 : 401 - 404
  • [42] Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon
    Kim, S
    Herman, IP
    Moore, KL
    Hall, DG
    Bevk, J
    PHYSICAL REVIEW B, 1996, 53 (08): : 4434 - 4442
  • [43] SPONTANEOUS AND STIMULATED RADIATION DUE TO BOUND EXCITONS IN CDXHG1-XTE
    IVANOVOMSKII, VI
    KURBANOV, KR
    RUSTAMOV, RB
    SMIRNOV, VA
    YULDASHEV, SU
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (08): : 944 - 945
  • [44] Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon
    Kim, S.
    Herman, I. P.
    Moore, K. L.
    Hall, D. G.
    Physical Review B: Condensed Matter, 53 (08):
  • [45] DECAY KINETICS OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN NEUTRON-IRRADIATED SILICON
    KAMINSKII, AS
    SAFONOV, AN
    LAVROV, EV
    FIZIKA TVERDOGO TELA, 1991, 33 (03): : 859 - 867
  • [46] BOUND EXCITONS IN GAP
    THOMAS, DG
    HOPFIELD, JJ
    GERSHENZON, M
    PHYSICAL REVIEW, 1963, 131 (06): : 2397 - &
  • [47] FINE-STRUCTURE IN THE SPECTRUM OF THE RECOMBINATION RADIATION OF EXCITONS BOUND TO ACCEPTORS IN SILICON
    KAMINSKII, AS
    SAFONOV, AN
    JETP LETTERS, 1992, 55 (04) : 242 - 245
  • [48] Reply to "Comment on 'Recombination of excitons bound to oxygen and silicon donors in freestanding GaN' "
    Wysmolek, A
    Korona, KP
    Stepniewski, R
    Baranowski, JM
    Bloniarz, J
    Potemski, M
    Jones, RL
    Look, DC
    Kuhl, J
    Park, SS
    Lee, SK
    PHYSICAL REVIEW B, 2004, 69 (15): : 157302 - 1
  • [49] OPTICAL-PROPERTIES OF COPPER IN SILICON - EXCITONS BOUND TO ISOELECTRONIC COPPER PAIRS
    WEBER, J
    BAUCH, H
    SAUER, R
    PHYSICAL REVIEW B, 1982, 25 (12): : 7688 - 7699
  • [50] ELECTRIC-FIELD-INDUCED QUENCHING OF SHALLOW AND DEEP BOUND EXCITONS IN SILICON
    WEMAN, H
    ZHAO, QX
    MONEMAR, B
    PHYSICAL REVIEW B, 1988, 38 (09): : 6185 - 6190
12345