ABSORPTION DUE TO BOUND EXCITONS IN SILICON

被引：74
|
作者：
DEAN, PJ
FLOOD, WF
KAMINSKY, G
机构：
来源：
PHYSICAL REVIEW | 1967年 / 163卷 / 03期
关键词：
D O I：
10.1103/PhysRev.163.721
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：721 / &
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