CHARACTERIZATION OF OBLIQUELY DEPOSITED TUNGSTEN/SILICON MULTILAYERS

W/Si multilayers (MLs) with periods 6.6-15 nm were evaporated both perpendicularly and obliquely at incident angles 20 degrees and 40 degrees to the normal. MLs were deposited at 70-100 degrees C onto oxidized silicon. The samples were-studied by TEM, CS-TEM, SAXD and resistometry in the temperature range 1.5-300 K. Experimental data were completed by simulation of the SAXD spectra. The MLs were found to be amorphous and superconducting with T-c less than or equal to 2.84 K. With increasing angle of deposition the thickness of the intermixed regions at the interfaces decreased and the roughness of the interfaces increased. The reflectivity of MLs was practically independent of the deposition; angle, probably due to the mutual compensation of the two above-mentioned effects. 2D-3D crossover in the weak localization and interaction behaviour observed in the temperature range T-c-30 K correlates with the pure amorphous Si layer thickness reduced due to the mutual penetration of W and Si at perpendicular deposition as well as at oblique deposition for the incident angle 20 degrees.