CHARACTERIZATION OF OBLIQUELY DEPOSITED TUNGSTEN/SILICON MULTILAYERS

被引:2
|
作者
MAJKOVA, E
LUBY, S
JERGEL, M
SENDERAK, R
GEORGE, B
VAEZZADEH, M
GHANBAJA, J
机构
[1] SLOVAK ACAD SCI,INST PHYS ELECTR,92101 PIESTANY,SLOVAKIA
[2] UNIV NANCY 1,PHYS SOLIDE LAB,F-54506 VANDOEUVRE NANCY,FRANCE
[3] UNIV NANCY 1,SERV COMMUN MICROSCOPIE ELECTR,F-54506 VANDOEUVRE NANCY,FRANCE
关键词
D O I
10.1016/0040-6090(94)90070-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
W/Si multilayers (MLs) with periods 6.6-15 nm were evaporated both perpendicularly and obliquely at incident angles 20 degrees and 40 degrees to the normal. MLs were deposited at 70-100 degrees C onto oxidized silicon. The samples were-studied by TEM, CS-TEM, SAXD and resistometry in the temperature range 1.5-300 K. Experimental data were completed by simulation of the SAXD spectra. The MLs were found to be amorphous and superconducting with T-c less than or equal to 2.84 K. With increasing angle of deposition the thickness of the intermixed regions at the interfaces decreased and the roughness of the interfaces increased. The reflectivity of MLs was practically independent of the deposition; angle, probably due to the mutual compensation of the two above-mentioned effects. 2D-3D crossover in the weak localization and interaction behaviour observed in the temperature range T-c-30 K correlates with the pure amorphous Si layer thickness reduced due to the mutual penetration of W and Si at perpendicular deposition as well as at oblique deposition for the incident angle 20 degrees.
引用
收藏
页码:295 / 301
页数:7
相关论文
共 50 条
  • [41] Characterization of sputter-deposited multilayers of Ni and Zr with APFIM/TAP
    AlKassab, T
    Macht, MP
    Naundorf, V
    Wollenberger, H
    Chambreland, S
    Danoix, F
    Blavette, D
    APPLIED SURFACE SCIENCE, 1996, 94-5 : 306 - 312
  • [42] STRUCTURAL CHARACTERIZATION BY TRANSMISSION ELECTRON-MICROSCOPY OF SILICON GROWN OVER SUBMICROMETER-PERIOD GRATINGS OF DEPOSITED TUNGSTEN
    VOJAK, BA
    RATHMAN, DD
    BURNS, JA
    CABRAL, SM
    EFREMOW, NN
    APPLIED PHYSICS LETTERS, 1984, 44 (02) : 223 - 225
  • [43] CHARACTERIZATION OF PLASMA-DEPOSITED SILICON DIOXIDE
    ADAMS, AC
    ALEXANDER, FB
    CAPIO, CD
    SMITH, TE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) : 1545 - 1551
  • [44] CHARACTERIZATION OF LASER IRRADIATED DEPOSITED SILICON LAYERS
    CELLER, GK
    LEAMY, HJ
    ASPNES, DE
    DOHERTY, CJ
    SHENG, TT
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C385 - C385
  • [45] Characterization of deposited nanocrystalline silicon by spectroscopic ellipsometry
    Bertin, F
    Baron, T
    Mariolle, D
    Martin, F
    Chabli, A
    Dupuy, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 175 (01): : 405 - 412
  • [46] CHARACTERIZATION OF PLASMA-DEPOSITED MICROCRYSTALLINE SILICON
    MISHIMA, Y
    MIYAZAKI, S
    HIROSE, M
    OSAKA, Y
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (01): : 1 - 12
  • [47] ELLIPSOMETRIC STUDIES OF OBLIQUELY DEPOSITED CHROMIUM FILMS
    MACHAGGAH, SM
    KIVAISI, RT
    LUSHIKU, EM
    SOLAR ENERGY MATERIALS, 1989, 19 (3-5): : 315 - 321
  • [48] STRUCTURE AND MORPHOLOGY OF OBLIQUELY DEPOSITED CDTE FILMS
    DHERE, NG
    PINHEIRO, RG
    PARIKH, NR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (03): : 599 - 608
  • [49] Characterization of Tungsten Carbide coatings deposited on AISI 1020 steel
    Santos, A.
    Gonzalez, C.
    Ramirez, Z. Y.
    II COLOMBIAN CONGRESS OF ELECTROCHEMISTRY (CCEQ) AND 2ND SYMPOSIUM ON NANOSCIENCE AND NANOTECHNOLOGY (SNN), 2017, 786
  • [50] SPECTRAL AND ANGULAR SELECTIVITY OF OBLIQUELY DEPOSITED FILMS
    KIVAISI, RT
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1983, 428 : 32 - 37