Pt-Ti/ALD-Al2O3/p-Si MOS CAPACITORS FOR FUTURE ULSI TECHNOLOGY

被引：0
|
作者：
Mahajan, Ashok M. [1 ]
Khairnar, Anil G. [1 ]
Thibeault, Brian J. [2 ]
机构：
[1] North Maharashtra Univ, Dept Elect, Jalgaon 425001, Maharashtra, India
[2] Univ Calif Santa Barbara, ECE Dept, Santa Barbara, CA 93106 USA
来源：
JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2011年 / 3卷 / 01期
关键词：
Al2O3; HIGH-K; GATE DIELECTRIC; MOS CAPACITOR; ELLIPSOMETER; C-V; ALD;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The high dielectric constant (high-k) thin film of Al2O3 was deposited by using Plasma enhanced atomic layer deposition (PE-ALD) technique. The electron beam evaporation system was used to deposit the Pt-Ti metal to fabricate the Pt-Ti/Al2O3/Si MOS capacitors. Thickness measurement of Al2O3 gate dielectric was carried out with variable angle spectroscopic ellipsometry, which is measured to be 2.83 nm. The MOS capacitors were characterized to evaluate the electrical properties using capacitance voltage (C-V) analyzer at different measurement frequencies. Capacitance voltage measurement shows that, dielectric constant k ranges from 7.87 to 10.44. In CV curve a slight negative shift is observed in the flatband voltage because of presence of trap charges in the Al2O3 MOS capacitor. A lower equivalent oxide thickness (EOT) of 1.057 nm is obtained for the fabricated Pt-Ti/Al2O3/Si MOS capacitors.
引用
收藏
页码：647 / 650
页数：4
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