Anomalous capacitance-voltage characteristics of Al/Al-rich Al2O3/p-Si capacitors and their reconstruction

被引：4

作者：

Liu, Z. ^{[1
]}

Chen, T. P. ^{[1
]}

Liu, Y. ^{[2
]}

Yang, M. ^{[1
]}

Wong, J. I. ^{[1
]}

Cen, Z. H. ^{[1
]}

Zhang, S. ^{[3
]}

Li, Y. B. ^{[4
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[3] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore

[4] Harbin Inst Technol, Sch Astronaut, Harbin 150080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 24期

基金：

新加坡国家研究基金会;

关键词：

alumina; aluminium; capacitance; elemental semiconductors; MOS capacitors; silicon;

D O I：

10.1063/1.3156028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Anomalous capacitance-voltage (C-V) characteristics of Al/Al-rich Al2O3/p-Si capacitors have been observed. The measured C-V curves exhibit rolloffs and frequency dispersion in the accumulation region and voltage stresses cause both horizontal and vertical shifts of the C-V curves. These anomalous behaviors are mainly due to the large current conduction and the charge trapping in the Al-rich Al2O3 layer. The anomalous C-V characteristics have been reconstructed based on a four-element circuit model. With the reconstructed C-V curves, the capacitance of the Al-rich Al2O3 layer and the charging-induced flatband voltage shift can be determined.

引用

页数：3

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