AVALANCHE AND TUNNELING BREAKDOWN MECHANISMS IN HEMTS POWER STRUCTURES

被引：2
|
作者：
CROSNIER, Y
TEMCAMANI, F
LIPPENS, D
SALMER, G
机构：
来源：
JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期
关键词：
D O I：
10.1051/jphyscol:19884118
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：563 / 566
页数：4
相关论文
共 50 条
  • [1] A model for tunneling-limited breakdown in high-power HEMTs
    Somerville, MH
    delAlamo, JA
    [J]. IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 35 - 38
  • [2] Physical study of the avalanche breakdown phenomenon in HEMTs
    Elkhou, M
    Rousseau, M
    Gerard, H
    De Jaeger, JC
    [J]. SOLID-STATE ELECTRONICS, 2005, 49 (04) : 535 - 544
  • [3] Insights into the off-state breakdown mechanisms in power GaN HEMTs
    Zagni, N.
    Puglisi, F. M.
    Pavan, P.
    Chini, A.
    Verzellesi, G.
    [J]. MICROELECTRONICS RELIABILITY, 2019, 100
  • [4] INFLUENCE OF TUNNELING PROCESSES ON AVALANCHE BREAKDOWN IN GE AND SI
    GROEZINGER, O
    HAECKER, W
    [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1307 - 1310
  • [5] Breakdown mechanisms in AlGaN/GaN HEMTs: An overview
    Meneghesso, Gaudenzio
    Meneghini, Matteo
    Zanoni, Enrico
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (10)
  • [6] Dependence of Avalanche Breakdown on Surface & Buffer Traps in AlGaN/GaN HEMTs
    Joshi, Vipin
    Shankar, Bhawani
    Tiwari, Shree Prakash
    Shrivastava, Mayank
    [J]. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017), 2017, : 109 - 112
  • [7] MODELING AND EXPERIMENTAL-STUDY OF BREAKDOWN MECHANISMS IN MULTICHANNEL ALGAAS GAAS POWER HEMTS
    TEMCAMANI, F
    CROSNIER, Y
    LIPPENS, D
    SALMER, G
    [J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1990, 3 (06) : 195 - 199
  • [8] Dynamic Breakdown Voltage of GaN Power HEMTs
    Zhang, R.
    Kozak, J. P.
    Song, Q.
    Xiao, M.
    Liu, J.
    Zhang, Y.
    [J]. 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2020,
  • [9] A NEW ANALYTICAL DIODE MODEL INCLUDING TUNNELING AND AVALANCHE BREAKDOWN
    HURKX, GAM
    DEGRAAFF, HC
    KLOOSTERMAN, WJ
    KNUVERS, MPG
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) : 2090 - 2098
  • [10] Mechanism for excess noise in mixed tunneling and avalanche breakdown of silicon
    Pan, Andrew
    Pan, Dee-Son
    Chui, Chi On
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (26)
12345