Dependence of Avalanche Breakdown on Surface & Buffer Traps in AlGaN/GaN HEMTs

被引：0

作者：

Joshi, Vipin ^{[1
,2
]}

Shankar, Bhawani ^{[1
]}

Tiwari, Shree Prakash ^{[2
]}

Shrivastava, Mayank ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Elect Syst Engn, Adv Nanoelect Device & Circuit Res Lab, Bangalore 560012, Karnataka, India

[2] Indian Inst Technol Jodhpur, Dept Elect Engn, Jodhpur 342011, Rajasthan, India

来源：

2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017) | 2017年

关键词：

ELECTRONS; DESIGN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the very first time, influence of traps on avalanche breakdown of AlGaN/GaN HEMTs is discussed. Impact of surface and bulk traps on breakdown voltage and device scaling is discussed with associated physics. Surface trap's were found to cause distinct breakdown characteristics with breakdown point varying from gate edge to drain edge, depending on nature, type and concentration. Buffer traps too influence the electric field near gate edge and leakage through the device, thereby affecting breakdown voltage accordingly.

引用

页码：109 / 112

页数：4

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