MODELING AND EXPERIMENTAL-STUDY OF BREAKDOWN MECHANISMS IN MULTICHANNEL ALGAAS GAAS POWER HEMTS

被引：6
|
作者：
TEMCAMANI, F
CROSNIER, Y
LIPPENS, D
SALMER, G
机构：
[1] Centre Hyperfréquences, Cnrs-Bat. P4, Université Des Sciences Et Techniques de Lille Flandres Artois, Villeneuve D'ascq
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1990年 / 3卷 / 06期
关键词：
device breakdown; Device modeling; power HEMT;
D O I：
10.1002/mop.4650030603
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A theoretical and experimental analysis of breakdown in the power HEMT AlGaAs/GaAs single or multiple wells is presented in this article. The two phenomena ionization and tunneling have been considered. The understanding of breakdown mechanisms has led to definition of structures particularly suitable for power applications. Copyright © 1990 Wiley Periodicals, Inc., A Wiley Company
引用
收藏
页码：195 / 199
页数：5
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