THE ROLE OF VAPOR ETCHING IN THE GROWTH OF EPITAXIAL INP

被引：13
|
作者：
ASHEN, DJ
ANDERSON, DA
APSLEY, N
EMENY, MT
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1982年 / 60卷 / 02期
关键词：
D O I：
10.1016/0022-0248(82)90093-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：225 / 234
页数：10
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