SILICON-ON-INSULATOR TECHNOLOGY FOR HIGH-TEMPERATURE METAL-OXIDE-SEMICONDUCTOR DEVICES AND CIRCUITS

被引：24
|
作者：
FLANDRE, D
机构：
[1] Microelectronics Laboratory, Université Catholique de Louvain, B-1348 Louvain-la-Neuve
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 29卷 / 1-3期
关键词：
SILICON-ON-INSULATOR; INTEGRATED CIRCUITS; MOS DEVICES; HIGH-TEMPERATURE OPERATION;
D O I：
10.1016/0921-5107(94)04018-Y
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The high temperature characteristics of devices and circuits realized in complementary metal oxide semiconductor (CMOS) technology on silicon-on-insulator (SOI) substrates are compared with other materials, and it is demonstrated that CMOS on SOI is presently the most suitable process for the realization of electronic circuits operating at up to more than 300 degrees C.
引用
收藏
页码：7 / 12
页数：6
相关论文
共 50 条
  • [31] A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate
    20143518118571
    1600, American Institute of Physics Inc. (116):
  • [32] A novel fully depleted air AlN silicon-on-insulator metal-oxide-semiconductor field effect transistor
    Yang Yuan
    Gao Yong
    Gong Peng-Liang
    CHINESE PHYSICS LETTERS, 2008, 25 (08) : 3048 - 3051
  • [33] A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate
    Mikhelashvili, V.
    Cristea, D.
    Meyler, B.
    Yofis, S.
    Shneider, Y.
    Atiya, G.
    Cohen-Hyams, T.
    Kauffmann, Y.
    Kaplan, W. D.
    Eisenstein, G.
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (07)
  • [34] INVESTIGATION OF FLOATING BODY EFFECTS IN SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    OUISSE, T
    GHIBAUDO, G
    BRINI, J
    CRISTOLOVEANU, S
    BOREL, G
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) : 3912 - 3919
  • [35] Drag of electron-hole bilayer in silicon-on-insulator metal-oxide-semiconductor field-effect transistor at low temperature
    Ahmed, Nabil
    Razanoelina, Manjakavahoaka
    Hori, Masahiro
    Fujiwara, Akira
    Ono, Yukinori
    APPLIED PHYSICS EXPRESS, 2024, 17 (06)
  • [36] Small-signal and noise model of fully depleted silicon-on-insulator metal-oxide-semiconductor devices for low-noise amplifier
    Kim, Guechol
    Murakami, Bunsei
    Goto, Masaru
    Kihara, Takao
    Nakamura, Keiji
    Shimizu, Yoshiyuki
    Matsuoka, Toshimasa
    Taniguchi, Kenji
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (9 A): : 6872 - 6877
  • [37] Small-signal and noise model of fully depleted silicon-on-insulator metal-oxide-semiconductor devices for low-noise amplifier
    Kim, Guechol
    Murakami, Bunsei
    Goto, Masaru
    Kihara, Takao
    Nakamura, Keiji
    Shimizu, Yoshiyuki
    Matsuoka, Toshimasa
    Taniguchi, Kenji
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (9A): : 6872 - 6877
  • [38] PHOTOLUMINESCENCE AND MICROSTRUCTURAL PROPERTIES OF HIGH-TEMPERATURE ANNEALED BURIED OXIDE SILICON-ON-INSULATOR
    DUNCAN, WM
    CHANG, PH
    MAO, BY
    CHEN, CE
    APPLIED PHYSICS LETTERS, 1987, 51 (10) : 773 - 775
  • [39] Soft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistors
    Chen, MC
    Ku, SH
    Chan, CT
    Wang, TH
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (04) : 2297 - 2300
  • [40] PHOTOLUMINESCENCE AND MICROSTRUCTURAL PROPERTIES OF HIGH-TEMPERATURE ANNEALED BURIED OXIDE SILICON-ON-INSULATOR
    DUNCAN, WM
    CHANG, PH
    MAO, BY
    CHEN, CE
    JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A12 - A12
12345